Reducing read-after-write errors in a non-volatile memory system using an old data copy

ABSTRACT

Following a relocation write in which data is relocated without update from an old physical location to a new physical location within the non-volatile memory array, a controller defers an update of a logical-to-physical translation (LPT) entry to associate a logical address of the data with a new physical address of the new physical location, for example, for a time-out period. During deferment of the update to the LPT entry, the controller services a read request targeting the logical address from data at the old physical location. In response to no update to the data being made during deferment of the update to the LPT entry, the controller performs the deferred update to the LPT entry. In response to an update to the data being made during the deferment of the update to the LPT entry, the controller refrains from performing the deferred update to the LPT entry.

PRIORITY CLAIM

This application is a continuation of and claims priority to U.S.application Ser. No. 14/960,631, which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION

This disclosure relates to data processing and storage, and morespecifically, to reducing read-after-write errors in a non-volatilememory system by temporarily servicing read requests by reference to anold data copy.

NAND flash memory is an electrically programmable and erasablenon-volatile memory technology that stores one or more bits of data permemory cell as a charge on the floating gate of a transistor or asimilar charge trap structure. In a typical implementation, a NAND flashmemory array is organized in blocks (also referred to as “erase blocks”)of physical memory, each of which includes multiple physical pages eachin turn containing a multiplicity of memory cells. By virtue of thearrangement of the word and bit lines utilized to access memory cells,flash memory arrays can generally be programmed on a page basis, but areerased on a block basis.

As is known in the art, blocks of NAND flash memory must be erased priorto being programmed with new data. A block of NAND flash memory cells iserased by applying a high positive erase voltage pulse to the p-wellbulk area of the selected block and by biasing to ground all of the wordlines of the memory cells to be erased. Application of the erase pulsepromotes tunneling of electrons off of the floating gates of the memorycells biased to ground to give them a net positive charge and thustransition the voltage thresholds of the memory cells toward the erasedstate. Each erase pulse is generally followed by an erase verifyoperation that reads the erase block to determine whether the eraseoperation was successful, for example, by verifying that less than athreshold number of memory cells in the erase block have beenunsuccessfully erased. In general, erase pulses continue to be appliedto the erase block until the erase verify operation succeeds or until apredetermined number of erase pulses have been used (i.e., the erasepulse budget is exhausted).

A NAND flash memory cell can be programmed by applying a positive highprogram voltage to the word line of the memory cell to be programmed andby applying an intermediate pass voltage to the memory cells in the samestring in which programming is to be inhibited. Application of theprogram voltage causes tunneling of electrons onto the floating gate tochange its state from an initial erased state to a programmed statehaving a net negative charge. Following programming, the programmed pageis typically read in a read verify operation to ensure that the programoperation was successful, for example, by verifying that less than athreshold number of memory cells in the programmed page contain biterrors. In general, program and read verify operations are applied tothe page until the read verify operation succeeds or until apredetermined number of programming pulses have been used (i.e., theprogram pulse budget is exhausted).

Some NAND flash memories, referred to in the art as Single Level Cell(SLC), support only two charge states, meaning that only one bit ofinformation can be stored per memory cell. Other NAND flash memories,referred to as Multi-Level Cell (MLC), Three Level Cell (TLC) and QuadLevel Cell (QLC), respectively enable storage of 2, 3 or 4 bitsinformation per cell through implementation of additional charge states.The higher storage density provided by NAND flash memories capable ofstoring multiple bits of information per cell often comes at the cost ofhigher bit error rates, slower programming times, and lower endurance(e.g., in terms of lifetime program/erase (P/E) cycle counts).

In NAND flash memories in which the individual cells store multiplebits, the bits are conventionally grouped into so called “lower page,”“middle page(s)” (in TLC and QLC), and “upper page.” These pages aredependent, such that programming of the upper page(s) requires that therelated (dependent) lower pages have already been programmed.Physically, to program an upper page, the flash chip internally firstneeds to read the dependent lower page(s), adjust the voltages of thelower page(s), and then write the upper page. The data contained in thelower, middle, and upper pages cannot be read immediately after writingwithout incurring an extremely high raw bit error rate (RBER)(potentially even an uncorrectable RBER), but can instead be correctlyread only after the charge introduced by the programming operationdiffuses (settles) in the cells. This period after programming duringwhich the programmed data settles in the cells (referred to herein asthe “time-out period”), is typically up to 100 ms in current NAND flashtechnology.

One technique employed in the art to avoid waiting for the time-outperiod to expire before accessing recently written data is to implementa higher-level write cache (e.g., in dynamic random access memory(DRAM)) that stores data from freshly written pages and serves it toincoming reads. One drawback of this approach is that the number of thepages that have to be stored in the higher-level write cache can be verylarge, especially for flash storage systems with high write throughputwhere pages on many planes may be written concurrently and/or flashstorage systems that perform heat segregation based on the updatefrequency of data where pages on many segregated data streams may bewritten concurrently. To accommodate the anticipated data volume, thewrite cache can become extremely large, which can result inprohibitively complex cache search techniques and large powerdissipation. The present disclosure therefore appreciates that it isdesirable to provide an alternative technique of providing access torecently programmed data that does not depend on the use of a large DRAMwrite cache.

BRIEF SUMMARY

In at least one embodiment, following a relocation write in which datais relocated without update from an old physical location to a newphysical location within the non-volatile memory array, a controllerdefers an update of a logical-to-physical translation (LPT) entry toassociate a logical address of the data with a new physical address ofthe new physical location, for example, for a time-out period or a givennumber of write requests. During deferment of the update to the LPTentry, the controller services a read request targeting the logicaladdress from data at the old physical location. In response to no updateto the data being made during deferment of the update to the LPT entry,the controller performs the deferred update to the LPT entry. Inresponse to an update to the data being made during the deferment of theupdate to the LPT entry, the controller refrains from performing thedeferred update to the LPT entry.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1A is a high level block diagram of a data processing environmentin accordance with one embodiment;

FIG. 1B is a more detailed block diagram of a flash card of the datastorage system of FIG. 1A;

FIGS. 2-5 illustrate an exemplary arrangement of physical memory withina NAND flash memory system in accordance with the present disclosure;

FIG. 6A depicts an exemplary implementation of a block stripe inaccordance with the present disclosure;

FIG. 6B depicts an exemplary implementation of a page stripe inaccordance with the present disclosure;

FIG. 7 illustrates an exemplary codeword stored in each data page inaccordance with the present disclosure;

FIG. 8 depicts an exemplary codeword stored in each data protection pagein accordance with the present disclosure;

FIG. 9 is a high level flow diagram of the flash management functionsand data structures employed to manage a flash memory in accordance withone embodiment;

FIGS. 10A-10B illustrate a technique for reducing read-after-writeerrors in a non-volatile memory system by servicing read requests byreference to an old data copy for a timeout period;

FIG. 11 is a high level logical flowchart of an exemplary process forreducing read-after-write errors in a non-volatile memory system usingan old data copy in accordance with one embodiment;

FIG. 12 depicts an exemplary embodiment of an entry of alogical-to-physical translation (LPT) table; and

FIG. 13 is a high level logical flowchart of an exemplary process forreducing read-after-write errors in a non-volatile memory system usingan old data copy in accordance with another embodiment.

DETAILED DESCRIPTION

With reference to the figures and with particular reference to FIG. 1A,there is illustrated a high level block diagram of an exemplary dataprocessing environment 100 including a data storage system 120 having anon-volatile memory array as described further herein. As shown, dataprocessing environment 100 includes one or more hosts, such as aprocessor system 102 having one or more processors 104 that processinstructions and data. Processor system 102 may additionally includelocal storage 106 (e.g., dynamic random access memory (DRAM) or disks)that may store program code, operands and/or execution results of theprocessing performed by processor(s) 104. In various embodiments,processor system 102 can be, for example, a mobile computing device(such as a smartphone or tablet), a laptop or desktop personal computersystem, a server computer system (such as one of the POWER seriesavailable from International Business Machines Corporation), or amainframe computer system. Processor system 102 can also be an embeddedprocessor system using various processors such as ARM, Power, Intel X86,or any other processor combined with memory caches, memory controllers,local storage, I/O bus hubs, etc.

Each processor system 102 further includes an input/output (I/O) adapter108 that is coupled directly (i.e., without any intervening device) orindirectly (i.e., through at least one intermediate device) to a datastorage system 120 via an I/O channel 110. In various embodiments, anI/O channel 110 may employ any one or a combination of known or futuredeveloped communication protocols, including, for example, Fibre Channel(FC), FC over Ethernet (FCoE), Internet Small Computer System Interface(iSCSI), InfiniBand, Transport Control Protocol/Internet Protocol(TCP/IP), Peripheral Component Interconnect Express (PCIe), etc. I/Ooperations (IOPs) communicated via I/O channel 110 include read IOPs bywhich a processor system 102 requests data from data storage system 120and write IOPs by which a processor system 102 requests storage of datain data storage system 120.

In the illustrated embodiment, data storage system 120 includes multipleinterface cards 122 through which data storage system 120 receives andresponds to input/output operations (TOP) 102 via I/O channels 110. Eachinterface card 122 is coupled to each of multiple Redundant Array ofInexpensive Disks (RAID) controllers 124 in order to facilitate faulttolerance and load balancing. Each of RAID controllers 124 is in turncoupled (e.g., by a PCIe bus) to each of multiple flash cards 126including, in this example, NAND flash storage media. In otherembodiments, other lossy storage media can be employed.

FIG. 1B depicts a more detailed block diagram of a flash card 126 ofdata storage system 120 of FIG. 1A. Flash card 126 includes a gateway130 that serves as an interface between flash card 126 and RAIDcontrollers 124. Gateway 130 is coupled to a general-purpose processor(GPP) 132, which can be configured (e.g., by program code) to performvarious management functions, such as pre-processing of IOPs received bygateway 130 and/or to schedule servicing of the IOPs by flash card 126.GPP 132 is coupled to a GPP memory 134 (e.g., Dynamic Random AccessMemory (DRAM) or Magneto-resistive Random Access Memory (MRAM)) that canconveniently buffer data created, referenced and/or modified by GPP 132in the course of its processing.

Gateway 130 is further coupled to multiple flash controllers 140, eachof which controls a respective NAND flash memory system 150. Flashcontrollers 140 can be implemented, for example, by an ApplicationSpecific Integrated Circuit (ASIC) or Field Programmable Gate Array(FPGA)) having an associated flash controller memory 142 (e.g., DRAM).In embodiments in which flash controllers 140 are implemented with anFPGA, GPP 132 may program and configure flash controllers 140 duringstart-up of data storage system 120. After startup, in general operationflash controllers 140 receive read and write IOPs from gateway 130 thatrequest to read data stored in NAND flash memory system 150 and/or tostore data in NAND flash memory system 150. Flash controllers 140service these IOPs, for example, by accessing NAND flash memory systems150 to read or write the requested data from or into NAND flash memorysystems 150 or by accessing one or more read and/or write caches (notillustrated in FIG. 1B) associated with NAND flash memory systems 150.

Flash controllers 140 implement a flash translation layer (FTL) thatprovides logical-to-physical address translation to enable access tospecific memory locations within NAND flash memory systems 150. Ingeneral, an IOP received by flash controller 140 from a host device,such as a processor system 102, contains the logical block address (LBA)at which the data is to be accessed (read or written) and, if a writeTOP, the write data to be written to data storage system 120. The TOPmay also specify the amount (or size) of the data to be accessed. Otherinformation may also be communicated depending on the protocol andfeatures supported by data storage system 120. As is known to thoseskilled in the art, NAND flash memory, such as that employed in NANDflash memory systems 150, is constrained by its construction such thatthe smallest granule of data that can be accessed by a read or write TOPis fixed at the size of a single flash memory page, for example, 16kilobytes (kB). The LBA provided by the host device corresponds to alogical page within a logical address space, the page typically having asize of 4 kB. Therefore, more than one logical page may be stored in aphysical flash page. The flash translation layer translates this LBAinto a physical address assigned to a corresponding physical location ina NAND flash memory system 150. Flash controllers 140 may performaddress translation and/or store mappings between logical and physicaladdresses in a logical-to-physical translation data structure, such as alogical-to-physical translation table (LPT), which may conveniently bestored in flash controller memory 142.

NAND flash memory systems 150 may take many forms in variousembodiments. Referring now to FIGS. 2-5, there is depicted one exemplaryarrangement of physical memory within a NAND flash memory system 150 inaccordance with one exemplary embodiment.

As shown in FIG. 2, NAND flash memory system 150 may be formed fromthirty-two (32) individually addressable NAND flash memory storagedevices. In the illustrated example, each of the flash memory storagedevices M0 a-M15 b takes the form of a board-mounted flash memory modulecapable of storing one or more bits per cell. Thus, flash memory modulesmay be implemented with Single Level Cell (SLC), Multi-Level Cell (MLC),Three Level Cell (TLC), or Quad Level Cell (QLC) memory. The thirty-twoNAND flash memory modules are arranged in sixteen groups of two, (M0 a,M0 b) through (M15 a, M15 b). For purposes of the physical addressingscheme, each group of two modules forms a “lane,” also sometimesreferred to as a “channel,” such that NAND flash memory system 150includes sixteen channels or lanes (Lane0-Lane15).

In a preferred embodiment, each of the individual lanes has a respectiveassociated bus coupling it to the associated flash controller 140. Thus,by directing its communications to one of the specific communicationbuses, flash controller 140 can direct its communications to one of thelanes of memory modules. Because each communication bus for a given laneis independent of the communication buses for the other lanes, a flashcontroller 140 can issue commands and send or receive data across thevarious communication buses at the same time, enabling the flashcontroller 140 to access the flash memory modules corresponding to theindividual lanes at, or very nearly at, the same time.

With reference now to FIG. 3, there is illustrated an exemplaryembodiment of a flash memory module 300 that can be utilized toimplement any of flash memory modules M0 a-M15 b of FIG. 2. As shown inFIG. 3, the physical storage locations provided by flash memory module300 are further subdivided into physical locations that can be addressedand/or identified through Chip Enables (CEs). In the example of FIG. 3,the physical memory of each flash memory chip 300 is divided into fourChip Enables (CE0, CE1, CE2 and CE3), each having a respective CE linethat is asserted by flash controller 140 to enable access to or from thephysical memory locations within the corresponding CE. Each CE is inturn subdivided into multiple dice (e.g., Die0 and Die1) each having twoplanes (e.g., Plane0 and Plane1). Each plane represents a collection ofblocks (described below) that, because of the physical layout of theflash memory chips, are physically associated with one another and thatutilize common circuitry (e.g., I/O buffers) for the performance ofvarious operations, such as read and write operations.

As further shown in FIGS. 4-5, an exemplary plane 400, which can beutilized to implement any of the planes within flash memory module 300of FIG. 3, includes, for example, 1024 or 2048 blocks of physicalmemory. Note that manufacturers often add some additional blocks as someblocks might fail early. In general, a block 500 is a collection ofphysical pages that are associated with one another, typically in aphysical manner. This association is such that a block is defined to bethe smallest granularity of physical storage locations that can beerased within NAND flash memory system 150. In the embodiment of FIG. 5,each block 500 includes, for example, 256 or 512 physical pages, where aphysical page is defined to be the smallest individually addressabledata unit for read and write access. In the exemplary system, eachphysical page of data has a common capacity (e.g., 16 kB) for datastorage plus additional storage for metadata described in more detailbelow. Thus, data is written into or read from NAND flash memory system150 on a page-by-page basis, but erased on a block-by-block basis.

If NAND flash memory system 150 is implemented is a memory technologysupporting multiple bits per cell, it is common for multiple physicalpages of each block 500 to be implemented in the same set of memorycells. For example, assuming 512 physical pages per block 500 as shownin FIG. 5 and two bits per memory cell (i.e., NAND flash memory 150 isimplemented in MLC memory), Page0 through Page255 (the lower pages) canbe implemented utilizing the first bit of a given set of memory cellsand Page256 through Page511 (the upper pages) can be implementedutilizing the second bit of the given set of memory cells. The actualorder of lower and upper pages may be interleaved and depends on themanufacturer.

As further shown in FIG. 5, each block 500 preferably includes blockstatus information (BSI) 502, which indicates the page retirement statusof physical pages comprising that block 500 as retired (i.e., no longerused to store user data) or non-retired (i.e., active or still usable tostore user data). In various implementations, BSI 502 can be collectedinto a single data structure (e.g., a vector or table) within block 500and/or maintained elsewhere in data storage system 120. As one example,in the embodiment illustrated in FIG. 9 and discussed further below, theblock status information of all blocks 500 in a NAND flash memory system150 is collected in a system-level data structure, for example, a blockstatus table (BST) 946 stored in GPP memory 134 or a flash controllermemory 142.

Because the flash translation layer implemented by data storage system120 isolates the logical address space made available to host devicesfrom the physical memory within NAND flash memory system 150, the sizeof NAND flash memory system 150 need not be equal to the size of thelogical address space presented to host devices. In most embodiments itis beneficial to present a logical address space that is less than thetotal available physical memory (i.e., to over-provision NAND flashmemory system 150). Overprovisioning in this manner ensures thatphysical memory resources are available when the logical address spaceis fully utilized, even given the presence of a certain amount ofinvalid data as described above. In addition to invalid data that hasnot yet been reclaimed the overprovisioned space can be used to ensurethere is enough logical space, even given the presence of memoryfailures and the memory overhead entailed by the use of data protectionschemes, such as Error Correcting Code (ECC), Cycle Redundancy Check(CRC), and parity.

In some embodiments, data is written to NAND flash memory system 150 onepage at a time. In other embodiments in which more robust error recoveryis desired, data is written to groups of associated physical pages ofNAND flash memory system 150 referred to herein as “page stripes.” In apreferred embodiment, all pages of a page stripe are associated withdifferent lanes to achieve high write bandwidth. Because in manyimplementations the smallest erase unit is a block, page stripes can begrouped into a block stripe as is shown in FIG. 6A, where each block inthe block stripe is associated with a different lane. When a blockstripe is built, any free block of a lane can be chosen, but preferablyall blocks within the same block stripe have the same or similar healthgrade. Note that the block selection can be further restricted to befrom the same plane, die, and/or chip enable. The lengths of the blockstripes can and preferably do vary, but in one embodiment in which NANDflash memory system 150 includes 16 lanes, each block stripe includesbetween two and sixteen blocks, with each block coming from a differentlane. Further details regarding the construction of block stripes ofvarying lengths can be found in U.S. Pat. Nos. 8,176,284; 8,176,360;8,443,136; and 8,631,273, which are incorporated herein by reference intheir entireties.

Once a block from each lane has been selected and a block stripe isformed, page stripes are preferably formed from physical pages with thesame page number (i.e., physical page index) from blocks in the blockstripe. While the lengths of the various page stripes stored into NANDflash memory system 150 can and preferably do vary, in one embodimenteach page stripe includes one to fifteen data pages of write data(typically provided by a host device) and one additional page (a “dataprotection page”) used to store data protection information for thewrite data. For example, FIG. 6B illustrates an exemplary page stripe610 including N data pages (i.e., Dpage00 through DpageN−1) and one dataprotection page (i.e., PpageN). The data protection page can be placedon any lane of the page stripe containing a non-retired page, buttypically is on the same lane for all page stripes of the same blockstripe to minimize metadata information. The addition of a dataprotection page as illustrated requires that garbage collection beperformed for all page stripes of the same block stripe at the sametime. After garbage collection of the block stripe completes, the blockstripe can be dissolved, and each block can be placed into the relevantready-to-use (RTU) queue as explained below.

FIG. 7 illustrates an exemplary format of a codeword stored in each datapage within page stripe 610 of FIG. 6B. Typically, multiple codewords,for example, 2 or 3, are stored in each data page, but an alternativeembodiment may also store a single codeword in a data page. In thisexample, each codeword 700 includes a data field 702, as well asadditional fields for metadata describing the data page. Depending onthe size of the codeword, the data field 702 holds data for one or morelogical pages. In another embodiment it may also hold fractions of dataof logical data pages. In the illustrated example, metadata fieldsinclude an LBA field 704 containing the LBAs stored in codeword 700, aCRC field 706 containing the CRC value computed for the combination ofdata field 702 and LBA field 704, and an ECC field 708 containing an ECCvalue calculated, in the illustrated example, from a combination ofcontents of data field 702, LBA field 704 and CRC field 706. In casedata field 702 holds fractions of logical data pages, the LBA field 704further holds information on which fractions of logical data pages arestored in the data field 702.

FIG. 8 depicts an exemplary format of a codeword in the data protectionpage of page stripe 610 of FIG. 6. In one embodiment, each dataprotection page stores multiple codewords, but an alternative embodimenta data protection page may store a single codeword. In the depictedexample, data protection codeword 800 includes a data XOR field 802 thatcontains the bit-by-bit Exclusive OR (XOR) of the contents of the datafields 702 of the codewords 700 in page stripe 610. Data protectioncodeword 800 further includes an LBA XOR field 804 that contains thebit-by-bit XOR of the LBA fields 704 of the codewords 700 in page stripe610. Data protection codeword 800 finally includes a CRC field 806 andECC field 808 for respectively storing a CRC value and an ECC value fordata protection codeword 800. Such a protection scheme is commonlyreferred to as RAID 5, since the parity field will not always be locatedon one particular flash plane. However, it should be appreciated thatalternate data protection schemes such as Reed-Solomon can alternativelyor additionally be used.

The formats for data pages and data protection pages described aboveprotect data stored in a page stripe using multiple different dataprotection mechanisms. First, the use of the ECC bits in each codewordof a data page allows the correction of some number of bit errors withinthe codeword in a flash page. Depending on the ECC method used it may bepossible correct hundreds of bits or even thousands of bits within aNAND flash page. After ECC checking and correction is performed, thecorrected CRC field is used to validate the corrected data. Usedtogether, these two mechanisms allow for the correction of relativelybenign errors and the detection of more serious errors using only localintra-page information. Should an uncorrectable error occur in a datapage, for example, due to failure of the physical page utilized to storethe data page, the contents of the data field and LBA field of thefailing data page may be reconstructed from the other data pages and thedata protection page for the page stripe.

While the physical memory locations in which the data pages and dataprotection page of a page stripe will vary within NAND flash memorysystem 150, in one embodiment the data pages and data protection pagethat comprise a given page stripe are preferably stored in physicalmemory locations selected to optimize the overall operation of the datastorage system 120. For example, in some embodiments, the data pages anddata protection page comprising a page stripe are stored such thatdifferent physical lanes are employed to store each of the data pagesand data protection page. Such embodiments support efficient access to apage stripe because flash controller 140 can access all of the pages ofdata that comprise the page stripe simultaneously or nearlysimultaneously. It should be noted that the assignment of pages to lanesneed not be sequential (i.e., data pages can be stored in any lane inany order), and unless a page stripe is a full length page stripe (e.g.,containing fifteen data pages and one data protection page), the lanesutilized to store the page stripe need not be adjacent.

Having described the general physical structure and operation of oneexemplary embodiment of a data storage system 120, certain operationalaspects of data storage system 120 are now described with reference toFIG. 9, which is a high level flow diagram of the flash managementfunctions and data structures employed by GPP 132 and/or flashcontrollers 140 in accordance with one embodiment.

As noted above, data storage system 120 does not generally allowexternal devices to directly address and/or access the physical memorylocations within NAND flash memory systems 150. Instead, data storagesystem 120 is generally configured to present a single contiguouslogical address space to the external devices, thus allowing hostdevices to read and write data to and from LBAs within the logicaladdress space while permitting flash controllers 140 and GPP 132 tocontrol where the data that is associated with the various LBAs actuallyresides in the physical memory locations comprising NAND flash memorysystems 150. In this manner, performance and longevity of NAND flashmemory systems 150 can be intelligently managed and optimized. In theillustrated embodiment, each flash controller 140 manages thelogical-to-physical translation using a logical-to-physical translationdata structure, such as logical-to-physical translation (LPT) table 900,which can be stored in the associated flash controller memory 142.

Flash management code running on the GPP 132 tracks erased blocks ofNAND flash memory system 150 that are ready to be used in ready-to-use(RTU) queues 906, which may be stored, for example, in GPP memory 134.In the depicted embodiment, management code running on the GPP 132preferably maintains one or more RTU queues 906 per channel, and anidentifier of each erased block that is to be reused is enqueued in oneof the RTU queues 906 corresponding to its channel.

A build block stripes function 920 performed by flash management coderunning on the GPP 132 constructs new block stripes for storing data andassociated parity information from the erased blocks enqueued in RTUqueues 906. As noted above with reference to FIG. 6A, block stripes arepreferably formed of blocks of the same or similar health (i.e.,expected remaining useful life) residing in different channels, meaningthat build block stripes function 920 can conveniently construct a blockstripe by drawing each block of the new block stripe from correspondingRTU queues 906 of different channels. The new block stripe is thenqueued to flash controller 140 for data placement.

In response to a write IOP received from a host, such as a processorsystem 102, a data placement function 910 of flash controller 140determines by reference to LPT table 900 whether the target LBA(s)indicated in the write request is/are currently mapped to physicalmemory page(s) in NAND flash memory system 150 and, if so, changes thestatus of each data page currently associated with a target LBA toindicate that it is no longer valid. In addition, data placementfunction 910 allocates a page stripe if necessary to store the writedata of the write IOP and any non-updated data (i.e., in case the writerequest is smaller than a logical page, there is still valid data whichneeds to be handled in a read-modify-write manner) from an existing pagestripe, if any, targeted by the write IOP, and/or stores the write dataof the write IOP and any non-updated (i.e., still valid) data from anexisting page stripe, if any, targeted by the write IOP to an alreadyallocated page stripe which has free space left. The page stripe may beallocated from either a block stripe already allocated to hold data orfrom a new block stripe built by build block stripes function 920. In apreferred embodiment, the page stripe allocation can be based on thehealth of the blocks available for allocation and the “heat” (i.e.,estimated or measured write access frequency) of the LBA of the writedata. Data placement function 910 then writes the write data, associatedmetadata (e.g., CRC and ECC values), for each codeword in each page ofthe page stripe, and parity information for the page stripe in theallocated page stripe. The associated metadata and parity informationcan be written to storage as soon as enough host data has been placedinto the page stripe. Flash controller 140 also updates LPT table 900 toassociate the physical page(s) utilized to store the write data with theLBA(s) indicated by the host device. Thereafter, flash controller 140can access the data to service host read IOPs by reference to LPT table900 as further illustrated in FIG. 9.

Once all pages in a block stripe have been written, flash controller 140places the block stripe into one of occupied block queues 902, whichflash management code running on the GPP 132 utilizes to facilitategarbage collection. As noted above, through the write process, pages areinvalidated, and therefore portions of the NAND flash memory system 150become unused. The associated flash controller 140 (and/or GPP 132)eventually needs to reclaim this space through garbage collectionperformed by a garbage collector 912. Garbage collector 912 selectsparticular block stripes for garbage collection based on a number offactors including, for example, the health of the blocks within theblock stripes and how much of the data within the erase blocks isinvalid. In the illustrated example, garbage collection is performed onentire block stripes, and flash management code running on GPP 132 logsthe block stripes ready to be recycled in a relocation queue 904, whichcan conveniently be implemented in the associated flash controllermemory 142 or GPP memory 134.

The flash management functions performed by GPP 132 or flash controller140 additionally include a relocation function 914 that relocates thestill valid data held in block stripes enqueued in relocation queue 904.To relocate such data, relocation function 914 issues relocation writerequests to data placement function 910 to request that the data of theold block stripe be written to a new block stripe in NAND flash memorysystem 150. In addition, relocation function 914 updates LPT table 900to remove the current association between the logical and physicaladdresses of the data. Once all still valid data has been moved from theold block stripe, the old block stripe is passed to dissolve blockstripes function 916, which decomposes the old block stripe into itsconstituent blocks, thus disassociating the blocks. Flash controller 140then erases each of the blocks formerly forming the dissolved blockstripe and increments an associated program/erase (P/E) cycle count forthe block in P/E cycle counts 944. Based on the health metrics 942 ofeach erased block, each erased block is either retired (i.e., no longerused to store user data) by a block retirement function 918 among theflash management functions executed on GPP 132, or alternatively,prepared for reuse by placing the block's identifier on the appropriateready-to-use (RTU) queue 906 in the associated GPP memory 134.

As further shown in FIG. 9, flash management functions executed on GPP132 include a background health checker 930. Background health checker930, which operates independently of the demand read and write IOPs ofhosts such as processor systems 102, continuously determines one or moreblock health metrics 942 (e.g., worst page and/or mean page bit errorrate (BER), programming and read voltages, etc.) for blocks belonging toblock stripes recorded in occupied block queues 902. Based on the one ormore of the block health metrics 942, background health checker 930 mayplace block stripes on relocation queue 904 for handling by relocationfunction 914. Thus, relocation function 914 can relocate data within theflash memory for a number of reasons, including garbage collection,block health, wear leveling, etc.

As noted above, one technique employed in the art to avoid experiencingread-after-write errors or to avoid waiting for the time-out period toexpire before accessing recently written data is to implement a largescale write cache, for example, in the DRAM utilized to implement theflash controller memory. The present disclosure recognizes thatread-after-write errors caused by reading recently written data and theadded latency of the time-out period can alternatively be avoided for atleast some classes of writes (e.g., relocation writes) by servicing readrequests by reference to an old copy of the requested data.

Referring now to FIGS. 10A-10B, a technique for avoidingread-after-write errors in a non-volatile memory system by servicingread requests by reference to an old data copy during a timeout periodis depicted. At some arbitrary initial time, LPT table 900, whichincludes a respective entry for each LBA associated with a NAND flashmemory system 150, includes an LPT entry 1000 that maps a given LBA to afirst physical block address (PBA). The first PBA uniquely identifies afirst physical location (e.g., physical page) within NAND flash memorysystem 150 at which data ‘A’ is stored, as indicated at referencenumeral 1002. At some later time, shown in FIG. 10A at reference numeral1004, a relocation write request that updates the physical location ofdata ‘A’ within NAND flash memory system 150 from the first physicallocation to a second physical location can be initiated, for example, bygarbage collector 912 (or alternatively, by background health checker930). Instead of immediately updating LPT entry 1000 to reflect the newsecond PBA of the second physical location of data ‘A’, the flashcontroller 140 defers the update to LPT entry 1000 until the time-outperiod of the relocation write has expired or a given number of newwrite requests have been processed such that a delay corresponding tominimal time-out period can be guaranteed. Because the update to LPTentry 1000 is deferred, during the time-out period flash controller 140prevents erasure of the block containing the old copy of data ‘A’ andcontinues to service read requests for data ‘A’ from the old copy ofdata ‘A’ stored at the first physical location by reference to theun-updated LPT entry 1000. Because the old copy of data ‘A’ is notrecently written, such read requests are not subject to theread-after-write errors to which reads made to new copy of data ‘A’would be prone. Once the time-out period has expired and the new copy ofdata ‘A’ has settled into the memory cells at the second physicallocation in NAND flash memory system 150, flash controller 140 updatesLPT entry 1000 to associate the LBA with the PBA of the second physicallocation, as indicated at reference numeral 1006. Because the time-outperiod has expired, subsequent reads, which are serviced using the newcopy of data ‘A’, will not be subject to the high raw bit error rate(RBER) typically experienced by reads made within the time-out period.After expiration of the time-out period, flash controller 140 is alsofree to erase the block containing old data ‘A’.

The scenario depicted in FIG. 10A presumes that no update is made to thedata associated with the LBA during the time-out period. However, if thedata associated with the LBA is updated during the time-out period, caremust be taken so that LPT entry 1000 is not updated at the end of thetime-out period to associate the LBA with a stale data. FIG. 10Billustrates how the prospective deferred update to LPT entry 1000 ishandled in such cases.

In the scenario shown in FIG. 10B, during the time-out period anintervening user write updating the data associated with the LBA is beenperformed to create new data ‘B’ at a third physical location in NANDflash memory system 150. Flash controller 140 accordingly updates LPTentry 1000 to associate the LBA with the PBA of the third physicallocation, as indicated at reference numeral 1008. At the end of thetime-out period associated with the relocation of data ‘A’, the flashcontroller 140 determines by reference to a data structure (e.g., aqueue, table, log, etc.) whether or not during the time-out period anintervening user write targeting the LBA has been performed. If nointervening user write targeting the LBA is detected, flash controller140 performs the deferred update to LPT entry 1000 as described in FIG.10A. If, however, flash controller 140 detects that an intervening writetargeting the LBA has been made during the time-out period, flashcontroller 140 refrains from updating LPT entry 1000 to associate theLBA with the second physical address (and the now-stale data ‘A’) at theend of the time-out period.

Multiple embodiments of the innovative technique illustrated in FIGS.10A-10B will be apparent to skilled artisans in light of the foregoingdescription. Two such embodiments are described below in further detailwith reference to FIGS. 11-12.

With reference now to FIG. 11, there is illustrated a high level logicalflowchart of an exemplary process for reducing read-after-write errorsin a non-volatile memory system using an old data copy in accordancewith a first embodiment. In this first embodiment, a flash controller140 detects an intervening write that causes a deferred update to an LPTentry 1000 to not be performed by reference to a flag within the LPTentry 1000.

The process of FIG. 11 begins at block 1100 and then proceeds to block1102, which illustrates a flash controller 140 performing a relocationwrite in response to a relocation write request, as illustrated atreference numeral 1004 of FIGS. 10A-10B. In conjunction with therelocation write, flash controller 140 logs the deferred update to LPTentry 1000 in a journal (log) 948, which can conveniently be stored inthe associated flash controller memory 142 (block 1104). The journalentry made at block 1104 may indicate, for example, the LBA and the newPBA with which the LBA is to be associated. In some implementations,journal 948 can be a dedicated relocation journal that logs only updatesto entries of LPT table 900 associated with relocation writes. In otherimplementations, journal 948 may be a general LPT update journal thatlogs LPT updates associated with both user writes (i.e., writesperformed in response to write IOPs received from processor systems 102)and relocation writes. In case a general LPT update journal is utilized,the general LPT journal preferably is configured to support extractionof the equivalent of a dedicated relocation journal. As further shown atblock 1106 of FIG. 11 and in FIG. 12, in conjunction with the relocationwrite, flash controller 140 also sets (e.g., to ‘1’) a flag 1202 in theLPT entry 1000 containing a translation field 1200 that translates theLBA targeted by the relocation write.

The process of FIG. 11 proceeds from block 1106 to block 1108, whichillustrates flash controller 140 waiting for the time-out periodassociated with the relocation write performed at block 1102 to expire.As shown at block 1110, during the time-out period the flash controller140 services any read IOPs requesting the data associated with the LBA(e.g., data ‘A’) by reference to the un-updated LPT entry 1000, meaningthat any such read requests will be satisfied from the old copy of thedata (i.e., old data ‘A’) residing at the first physical location unlessan intervening update is made to the data. In response to receiving anywrite IOP targeting the LBA translated by the LPT entry 1000 during thetime-out period, flash controller 140 updates translation field 1200 ofLPT entry 1000 to associate the target LBA with the PBA of the new data(e.g., new data ‘B’) and resets (e.g., to ‘0’) flag 1202 of LPT entry1000, as shown at block 1112 of FIG. 11 and reference numeral 1008 ofFIG. 10B.

At expiration of the time-out period, flash controller 140 determines atblock 1114 whether or not the flag 1202 of LPT entry 1000 remains set.If not, flash controller 140 refrains from performing the deferredupdate of LPT entry 1000 associated with the relocation write, therebyimplicitly invalidating the relocated copy of the data (i.e., new data‘A’), and the process of FIG. 11 ends at block 1120. If, on the otherhand, flash controller 140 determines at block 1114 that flag 1202 ofLPT entry 1000 remains set, the process proceeds from block 1114 toblock 1116. Block 1116 depicts flash controller 140 performing thedeferred update to LPT entry 1000 associated with the relocation writeperformed at block 1102 by replaying the LPT update from the entry madein journal 948 at block 1104. (This deferred update is furtherillustrated at reference numeral 1006 of FIG. 10A.) Flash controller 140may additionally reset flag 1202 in LPT entry 1000 to signify completionof the deferred LPT update. In another embodiment, the bit is resetlater by a background process. As indicated at block 1118, following thedeferred update to the LPT entry 1000, flash controller 140 services anyread requests targeting the LBA by reference to the updated LPT entry1000, meaning that any such read request is satisfied from the new copyof the data (e.g., new data ‘A’) until it is relocated or updated.Following block 1118, the process of FIG. 11 ends at block 1120.

FIG. 13 is a high level logical flowchart of an exemplary process forreducing read-after-write errors in a non-volatile memory system usingan old data copy in accordance with a second embodiment. In this secondembodiment, a flash controller 140 detects by reference to an entry injournal 948 whether an intervening write has been performed that causesa deferred update to an LPT entry 1000 to not be performed. Accordingly,in the second embodiment each LPT entry 1000 can include only atranslation field 1200 and need not include a flag 1202 as shown in FIG.12.

The process of FIG. 13 begins at block 1300 and then proceeds to block1302, which illustrates a flash controller 140 performing a relocationwrite, as illustrated at reference numeral 1004 of FIGS. 10A-10B. Inconjunction with the relocation write, flash controller 140 logs thedeferred update to LPT entry 1000 in journal 948. To facilitatedetection of intervening writes targeting the LBA translated by LPTentry 1000, the journal entry made at block 1304 preferably records notonly the LBA and the new PBA with which the LBA is to be associated, butalso the old PBA with which the LBA is currently associated by the LPTentry 1000.

The process of FIG. 13 proceeds from block 1304 to block 1306, whichillustrates flash controller 140 waiting for the time-out periodassociated with the relocation write performed at block 1302 to expire.As shown at block 1308, during the time-out period the flash controller140 services any read IOPs requesting the data associated with the LBA(e.g., data ‘A’) by reference to the un-updated LPT entry 1000, meaningthat any such read requests will be satisfied from the old copy of thedata (i.e., old data ‘A’) unless an intervening update is made to thedata. In response to receiving any write IOP targeting the LBAtranslated by the LPT entry 1000 during the time-out period, flashcontroller 140 updates translation field 1200 of the LPT entry 1000 toassociate the target LBA with the PBA of the new data (e.g., new data‘B’), as shown at block 1110 of FIG. 11 and reference numeral 1008 ofFIG. 10B.

At expiration of the time-out period, flash controller 140 determines atblock 1312 whether or not translation field 1200 of LPT entry 1000 stillassociates the LBA with the old PBA recorded in the entry of journal 948at block 1304. If not, flash controller 140 refrains from performing thedeferred update of LPT entry 1000 associated with the relocation write,and the process of FIG. 13 ends at block 1320. If, on the other hand,flash controller 140 determines at block 1312 that LPT entry 1000 stillassociates the LBA with the old PBA recorded in journal 948, the processproceeds from block 1312 to block 1314. Block 1314 depicts flashcontroller 140 performing the deferred update to LPT entry 1000associated with the relocation write performed at block 1302 byreplaying the LPT update from the entry made in journal 948 at block1304 and proceeds to block 1316. As indicated at block 1316, followingthe deferred update to the LPT entry 1000, flash controller 140 servicesany read requests targeting the LBA by reference to the updated LPTentry 1000, meaning that any such read request is satisfied from the newcopy of the data (e.g., new data ‘A’) until it is relocated or updated.Following block 1316, the process of FIG. 13 ends at block 1320.

The present invention may be a system, a method, and/or a computerprogram product. The computer program product may include a computerreadable storage medium (or media) having computer readable programinstructions thereon for causing a processor to carry out aspects of thepresent invention.

The computer readable storage medium can be a tangible device that canretain and store instructions for use by an instruction executiondevice. The computer readable storage medium may be, for example, but isnot limited to, an electronic storage device, a magnetic storage device,an optical storage device, an electromagnetic storage device, asemiconductor storage device, or any suitable combination of theforegoing. A non-exhaustive list of more specific examples of thecomputer readable storage medium includes the following: a portablecomputer diskette, a hard disk, a random access memory (RAM), aread-only memory (ROM), an erasable programmable read-only memory (EPROMor Flash memory), a static random access memory (SRAM), a portablecompact disc read-only memory (CD-ROM), a digital versatile disk (DVD),a memory stick, a floppy disk, a mechanically encoded device such aspunch-cards or raised structures in a groove having instructionsrecorded thereon, and any suitable combination of the foregoing. Acomputer readable storage medium, as used herein, is not to be construedas being transitory signals per se, such as radio waves or other freelypropagating electromagnetic waves, electromagnetic waves propagatingthrough a waveguide or other transmission media (e.g., light pulsespassing through a fiber-optic cable), or electrical signals transmittedthrough a wire.

Computer readable program instructions described herein can bedownloaded to respective computing/processing devices from a computerreadable storage medium or to an external computer or external storagedevice via a network, for example, the Internet, a local area network, awide area network and/or a wireless network. The network may comprisecopper transmission cables, optical transmission fibers, wirelesstransmission, routers, firewalls, switches, gateway computers and/oredge servers. A network adapter card or network interface in eachcomputing/processing device receives computer readable programinstructions from the network and forwards the computer readable programinstructions for storage in a computer readable storage medium withinthe respective computing/processing device.

Computer readable program instructions for carrying out operations ofthe present invention may be assembler instructions,instruction-set-architecture (ISA) instructions, machine instructions,machine dependent instructions, microcode, firmware instructions,state-setting data, or either source code or object code written in anycombination of one or more programming languages, including an objectoriented programming language such as Smalltalk, C++ or the like, andconventional procedural programming languages, such as the “C”programming language or similar programming languages. The computerreadable program instructions may execute entirely on the user'scomputer, partly on the user's computer, as a stand-alone softwarepackage, partly on the user's computer and partly on a remote computeror entirely on the remote computer or server. In the latter scenario,the remote computer may be connected to the user's computer through anytype of network, including a local area network (LAN) or a wide areanetwork (WAN), or the connection may be made to an external computer(for example, through the Internet using an Internet Service Provider).In some embodiments, electronic circuitry including, for example,programmable logic circuitry, field-programmable gate arrays (FPGA), orprogrammable logic arrays (PLA) may execute the computer readableprogram instructions by utilizing state information of the computerreadable program instructions to personalize the electronic circuitry,in order to perform aspects of the present invention.

Aspects of the present invention are described herein with reference toflowchart illustrations and/or block diagrams of methods, apparatus(systems), and computer program products according to embodiments of theinvention. It will be understood that each block of the flowchartillustrations and/or block diagrams, and combinations of blocks in theflowchart illustrations and/or block diagrams, can be implemented bycomputer readable program instructions.

These computer readable program instructions may be provided to aprocessor of a general purpose computer, special purpose computer, orother programmable data processing apparatus to produce a machine, suchthat the instructions, which execute via the processor of the computeror other programmable data processing apparatus, create means forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks. These computer readable program instructionsmay also be stored in a computer readable storage medium that can directa computer, a programmable data processing apparatus, and/or otherdevices to function in a particular manner, such that the computerreadable storage medium having instructions stored therein comprises anarticle of manufacture including instructions which implement aspects ofthe function/act specified in the flowchart and/or block diagram blockor blocks.

The computer readable program instructions may also be loaded onto acomputer, other programmable data processing apparatus, or other deviceto cause a series of operational steps to be performed on the computer,other programmable apparatus or other device to produce a computerimplemented process, such that the instructions which execute on thecomputer, other programmable apparatus, or other device implement thefunctions/acts specified in the flowchart and/or block diagram block orblocks.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods, and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof instructions, which comprises one or more executable instructions forimplementing the specified logical function(s). In some alternativeimplementations, the functions noted in the block may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

As has been described, in at least one embodiment, following arelocation write in which data is relocated without update from an oldphysical location to a new physical location within the non-volatilememory array, a controller defers an update of a logical-to-physicaltranslation (LPT) entry to associate a logical address of the data witha new physical address of the new physical location, for example, for atime-out period. During deferment of the update to the LPT entry, thecontroller services a read request targeting the logical address fromdata at the old physical location. In response to no update to the databeing made during deferment of the update to the LPT entry, thecontroller performs the deferred update to the LPT entry. In response toan update to the data being made during the deferment of the update tothe LPT entry, the controller refrains from performing the deferredupdate to the LPT entry.

In many flash storage systems operating under certain workloads,relocation writes may account for two to three times as many writes ashost writes. The disclosed technique eliminates the need to cache writedata associated with relocation writes (e.g., in a DRAM write cacheresiding in flash controller memory 142), which can effectively reducethe required size of the write cache, if present, by two or three times.

It should also be noted that the described technique can also be used tosupport relocation writes to one or more physical location(s) thatis/are close to retirement. In this application, the update to the LPTtable entry can be deferred until data from a new physical location isverified to be readable (i.e., ECC can decode the data) and identical todata residing at the old physical location. This read-verify processprovides increased assurance that the data will subsequently be readableat the new physical location. In case the data cannot be decoded at thenew physical location by the read-verify process, the data can again berelocated to another block, and a read-verify operation can again beattempted. In response to a successful read-verify following arelocation write, the controller conditionally performs the update tothe LPT table entry based on whether or not the data has been updatedduring deferment of the update to the LPT table entry.

While the present invention has been particularly shown as describedwith reference to one or more preferred embodiments, it will beunderstood by those skilled in the art that various changes in form anddetail may be made therein without departing from the spirit and scopeof the invention. For example, although aspects have been described withrespect to a data storage system including a flash controller thatdirects certain functions, it should be understood that presentinvention may alternatively be implemented as a program productincluding a storage device storing program code that can be processed bya processor to perform such functions or cause such functions to beperformed. As employed herein, a “storage device” is specificallydefined to include only statutory articles of manufacture and to excludeenergy per se, transmission media per se, and transitory propagatingsignals per se.

In addition, although embodiments have been described that include useof a NAND flash memory, it should be appreciated that embodiments of thepresent invention can also be used with other types of non-volatilerandom access memory (NVRAM) including, for example, phase-change memory(PCM) and combinations thereof.

The figures described above and the written description of specificstructures and functions below are not presented to limit the scope ofwhat Applicants have invented or the scope of the appended claims.Rather, the figures and written description are provided to teach anyperson skilled in the art to make and use the inventions for whichpatent protection is sought. Those skilled in the art will appreciatethat not all features of a commercial embodiment of the inventions aredescribed or shown for the sake of clarity and understanding. Persons ofskill in this art will also appreciate that the development of an actualcommercial embodiment incorporating aspects of the present inventionswill require numerous implementation-specific decisions to achieve thedeveloper's ultimate goal for the commercial embodiment. Suchimplementation-specific decisions may include, and likely are notlimited to, compliance with system-related, business-related,government-related and other constraints, which may vary by specificimplementation, location and from time to time. While a developer'sefforts might be complex and time-consuming in an absolute sense, suchefforts would be, nevertheless, a routine undertaking for those of skillin this art having benefit of this disclosure. It must be understoodthat the inventions disclosed and taught herein are susceptible tonumerous and various modifications and alternative forms. Lastly, theuse of a singular term, such as, but not limited to, “a” is not intendedas limiting of the number of items.

What is claimed is:
 1. A method in a data storage system including anon-volatile memory array controlled by a controller, wherein thenon-volatile memory array includes a plurality of blocks each includinga plurality of physical pages, the method comprising: as part of agarbage collection process, the controller performing a relocation writein which data is relocated, without update, from an old physicallocation within the non-volatile memory array to a new physical locationwithin the non-volatile memory array following the relocation write, thecontroller deferring an update of a logical-to-physical translation(LPT) entry to associate a logical address of the data with the newphysical address of the new physical location; during deferment of theupdate to the LPT entry, the controller servicing a read requesttargeting the logical address from data at the old physical location anddetecting an update to the data by reference to a flag in the LPT entry;in response to no update to the data being made during deferment of theupdate to the LPT entry, the controller performing the deferred updateto the LPT entry; and in response to an update to the data being madeduring deferment of the update to the LPT entry, the controllerrefraining from performing the deferred update to the LPT entry.
 2. Themethod of claim 1, wherein: the method further comprises in conjunctionwith the relocation write recording the update of the LPT entry in ajournal entry; and performing the deferred update includes replaying theupdate of the LPT entry from the journal entry.
 3. The method of claim1, wherein the detecting includes: setting the flag in response to therelocation write; and detecting an update to the data during defermentof the update to the LPT entry based on whether the flag is set orreset.
 4. The method of claim 3, and further comprising resetting theflag in response to an update to the data during deferment of the updateto the LPT entry.
 5. The method of claim 1, and further comprising: inconjunction with the relocation write, recording, in a journal entry,the update of the LPT entry, wherein the journal entry includes an oldphysical address of the old physical location; and detecting an updateto the data during deferment of the update to the LPT entry based onwhether the LPT entry associates the logical address with the oldphysical address recorded in the journal entry.